document number: 93510 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 23-jun-08 1 standard recovery diodes (stud version), 400 a 400u(r) series vishay semiconductors features ? wide current range ? high surge current capabilities ? stud cathode and stud anode version ? standard jedec types ? rohs compliant ? designed and qualified for industrial level typical applications ? converters ? power supplies ? machine tool controls ? high power drives electrical specifications product summary i f(av) 400 a do-205ab (do-9) rohs compliant major ratings and characteristics parameter test conditions values units i f(av) 400 a t c 120 c i f(rms) 630 a i fsm 50 hz 8250 a 60 hz 8640 i 2 t 50 hz 340 ka 2 s 60 hz 311 v rrm range 800 to 1600 v t j - 40 to 200 c voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j = t j maximum ma 400u(r) 80 800 900 15 120 1200 1300 160 1600 1700
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93510 2 revision: 23-jun-08 400u(r) series vishay semiconductors standard recovery diodes (stud version), 400 a note ? the table above shows the increment of thermal resistance r thjc when devices operate at diffe rent conduction angles than dc forward conduction parameter symbol test conditions values units maximum average forward current at case temperature i f(av) 180 conduction, half sine wave 400 a 120 c maximum rms forward current i f(rms) dc at 110 c case temperature 630 a maximum peak, one cycle forward, non-repetitive surge current i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 8250 a t = 8.3 ms 8640 t = 10 ms 100 % v rrm reapplied 6940 t = 8.3 ms 7270 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 340 ka 2 s t = 8.3 ms 311 t = 10 ms 100 % v rrm reapplied 241 t = 8.3 ms 220 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 3400 ka 2 ? s low level value of threshold voltage v f(to)1 (16.7 % x ? x i f(av) < i < ? x i f(av) ), t j = t j maximum 0.77 v high level value of threshold voltage v f(to)2 (i > ? x i f(av) ), t j = t j maximum 0.85 low level value of forward slope resistance r f1 (16.7 % x ? x i f(av) < i < ? x i f(av) ), t j = t j maximum 0.49 m ? high level value of forward slope resistance r f2 (i > ? x i f(av) ), t j = t j maximum 0.49 maximum forward voltage drop v fm i pk = 1500 a, t j = t j maximum, t p = 10 ms sinusoidal wave 1.62 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating and storage temperature range t j , t stg - 40 to 200 c maximum thermal resistance, junction to case r thjc dc operation 0.15 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.04 maximum allowed mounting torque 10 % not lubricated threads 27 n m approximate weight 250 g case style see dimensions - link at the end of datasheet do-205ab (do-9) ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.020 0.013 t j = t j maximum k/w 120 0.023 0.023 90 0.029 0.031 60 0.042 0.044 30 0.073 0.074
document number: 93510 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 23-jun-08 3 400u(r) series standard recovery diodes (stud version), 400 a vishay semiconductors fig. 1 - current ratings characteristics f ig. 2 - current ratings characteristics fig. 3 - forward powe r loss characteristics fig. 4 - forward powe r loss characteristics average forward current (a) maximum allowable case temperature (c) 8 0 90 100 110 120 130 140 150 160 170 1 8 0 190 200 0 50 100 150 200 250 300 350 400 450 30 60 90 120 1 8 0 cond u ction angle 400u/r average forward current (a) maximum allowable case temperature (c) 110 120 130 140 150 160 170 1 8 0 190 200 0 100 200 300 400 500 dc 30 60 90 120 1 8 0 cond u ction period 400u/r 10 30 50 70 90 110 130 150 170 190 0.2 k/ w 0.3 k/ w 0.4 k/ w 0.6 k/ w 1 k/ w 0.1 k/ w 1. 8 k/ w rthsa = 0.04 k/ w - de lta r 0 50 100 150 200 250 300 350 400 450 500 550 50 100 150 200 250 300 350 400 450 1 8 0 120 90 60 30 rms limit cond u ction angle 400u/r average forward current (a) maximum average forward power loss (w) maximum allowable ambient temperature (c) 0 100 200 300 400 500 600 700 8 00 dc 1 8 0 120 90 60 30 rms limit cond u ction period 400u/r 10 30 50 70 90 110 130 150 170 190 0.2 k/ w 0.3 k/ w 0.4 k/ w 0.6 k/ w 1 k/ w 0.1 k/ w 1. 8 k/ w rthsa = 0.04 k/ w - delta r average forward current (a) maximum average forward power loss (w) maximum allowable ambient temperature (c) 50 150 250 350 450 550 650
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93510 4 revision: 23-jun-08 400u(r) series vishay semiconductors standard recovery diodes (stud version), 400 a fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - forward voltage drop characteristics fig. 8 - thermal impedance z thjc characteristic 2000 3000 4000 5000 6000 7000 8 000 110100 400u/r at any rated load condition and w ith rated v rrm applied follo w ing s u rge. initial tj = 190c @ 60 hz 0.00 8 3 s @ 50 hz 0.0100 s peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 1000 2000 3000 4000 5000 6000 7000 8 000 9000 0.01 0.1 1 v ers u s p u lse train d u ration. maxim u m n on repetiti v e s u rge c u rrent 400u/r initial tj = 190c n o v oltage reapplied rated v rrm reapplied peak half sine wave forward current (a) pulse train duration (s) 100 1000 10000 0.511.522.5 400u/r tj = 25c tj = 190c instantaneous forward voltage (v) instantaneous forward current (a) 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 400u/r steady state v al u e: rthjc = 0.15 k/ w (dc operation) square wave pulse duration (s) transient thermal impedance z thjc (k/w)
document number: 93510 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 23-jun-08 5 400u(r) series standard recovery diodes (stud version), 400 a vishay semiconductors ordering information table device code 5 13 24 6 40 0 u r 160 d 1 - 40 = essential part number 2 - 0 = standard recovery device 3 - u = stud normal polarity (cathode to stud) 5 - voltage code x 10 = v rrm (see voltage ratings table) 6 - diffused diode note: for metric device m16 x 1.5 contact factory 4 - none = stud normal polarity (cathode to stud) r = stud reverse polarity (anode to stud) links to related documents dimensions http://www.vishay.com/doc?95339
document number: 95339 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 24-jul-08 1 do-205ab (do-9) for 400u(r) series outline dimensions vishay semiconductors dimensions in millimeters (inches) note ? for metric device: m 16 x 1.5 contact factory 19 (0.75) max. 3/4"-16unf-2a (1) sw 32 ? 28.5 (1.08) max. 16 (0.63) max. 9.5 (0.37) min. ? 8.5 (0.33) nom. 4 (0.16) max. 39 (1.53) max. c.s. 35 mm2 (0.054 s.i.) glass-metal seal 200 10 (7.87 0.39) 75 (2.95) min. 21 (0.82) max.
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